Performance Investigation of Gate-All-Around Nanowire Fets for Logic Applications
نویسندگان
چکیده
منابع مشابه
Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor
In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...
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0167-9317/$ see front matter 2012 Elsevier B.V. A http://dx.doi.org/10.1016/j.mee.2012.07.048 ⇑ Corresponding author. E-mail address: [email protected] (D. Sacch We report on the top-down fabrication of vertically-stacked polysilicon nanowire (NW) gate-all-around (GAA) field-effect-transistors (FET) by means of Inductively Coupled Plasma (ICP) etching and nanostencil lithography. The nan...
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In this paper, we investigate the optimization of tensile strain caused by thermal oxidation in a doubly-clamped silicon nanowire FET to enhance the mobility of its carriers. Spacer technology combined with sacrificial oxidations was used to fabricate ≈ 100 nm wide nanowires. The temperature and the duration of sacrificial wet oxidation are the main parameters that determine the induced strain....
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Semiconducting nanowires have been pointed out as one of the most promising building blocks for submicron electrical applications. These nanometer materials open new opportunities in the area of post-planar traditional metal-oxide-semiconductor devices. Herein, we demonstrate a new technique to fabricate horizontally suspended silicon nanowires with gate-all-around field-effect transistors. We ...
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Recently, gate-all-around (GAA) nanowire field effect transistors (NWFETs) have attracted increasing attention due to their superior gate control and short channel effect immunity [1-4]. However, confined by the limitation of manufacturing process, the different aspect ratio (AR) results in different shapes of channel cross section, such as ellipse-shaped or rectangular-shaped instead of the id...
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ژورنال
عنوان ژورنال: Indian Journal of Science and Technology
سال: 2015
ISSN: 0974-5645,0974-6846
DOI: 10.17485/ijst/2015/v8i3/59545